nd2406l/2410l, BSS129 siliconix s-52426erev. c, 14-apr-97 1 n-channel depletion-mode mosfet transistors product summary part number v (br)dsv min (v) r ds(on) max ( ) v gs(off) (v) i d (a) nd2406l 240 6 1.5 to 4.5 0.23 nd2410l 240 10 0.5 to 2.5 0.18 BSS129 230 20 0.7 (min) 0.15 features benefits applications high breakdown voltage: 260 v normally aono low r ds switch: 3.5 low input and output leakage low-power drive requirement low input capacitance full-voltage operation low offset voltage low error voltage easily driven without buffer high-speed switching normally aono switching circuits current sources/limiters power supply, converter circuits solid-state relays telecom switches 1 to-226aa (to-92) top view s d g 2 3 to-92-18cd (to-18 lead form) top view s g d 1 2 3 nd2406l nd2410l BSS129 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol nd2406l nd2410l BSS129 unit drain-source voltage v ds 240 240 230 v gate-source voltage v gs 30 30 20 v continuous drain current (t j = 150 c) = i d 0.23 0.18 0.15 continuous drain current (t j = 150 c) = i d 0.14 0.12 a pulsed drain current a i dm 0.9 0.9 0.6 power dissipation = p d 0.8 0.8 1.0 w power dissipation = p d 0.32 0.32 0.4 w maximum junction-to-ambient r thja 156 156 125 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70198. applications information may also be obtained via faxback, request document #70612.
nd2406l/2410l, BSS129 2 siliconix s-52426erev. c, 14-apr-97 specifications a limits nd2406l nd2410l BSS129 parameter symbol test conditions typ b min max min max min max unit static dis v gs = 9 v, i d = 10 a 260 240 drain-source breakdown volta g e v (br)dsv v gs = 5 v, i d = 10 a 260 240 g v gs = 3 v, i d = 250 a 260 230 v gate source cutoff voltage v gs( ff) v ds = 5 v, i d = 10 a 1.5 4.5 0.5 2.5 gate - source cutoff voltage v gs(off) v ds = 3 v, i d = 1 ma 0.7 gate body leakage i gss v ds = 0 v, v gs = 20 v 10 10 100 na gate - body leakage i gss = 50 50 na v ds = 180 v, v gs = 9 v 1 = 200 drain cutoff current i d( ff) v ds = 180 v, v gs = 5 v 1 a drain cutoff current i d(off) = 200 a v ds = 230 v, v gs = 3 v 0.1 = 200 drain-saturation current c i dss v ds = 10 v, v gs = 0 v 350 40 40 ma v gs = 2 v, i d = 30 ma 3.3 drain source on resistance c r ds( ) v gs = 0 v, i d = 30 ma 4.5 6 10 drain - source on - resistance c r ds(on) = 7.2 15 25 v gs = 0 v, i d = 14 ma 4 20 forward transconductance c g f v ds = 25 v, i d = 250 ma 375 140 ms forward transconductance c g fs 110 ms common source output conductance c g os v ds = 10 v, i d = 30 a 70 s dynamic input capacitance c iss v 25 v v 5v 70 120 120 output capacitance c oss v ds = 25 v, v gs = 5 v f = 1 mhz 20 30 30 pf reverse transfer capacitance c rss 10 15 15 switching d turn on time t d(on) 15 turn - on time t r
25
30
75 ns turn - off time t d(off)
30
40 ns turn - off time t f 100 notes a. t a = 25 c unless otherwise noted. vddv24 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
nd2406l/2410l, BSS129 siliconix s-52426erev. c, 14-apr-97 3 typical characteristics (25 c unless otherwise noted) output characteristics (nd2410) on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. draincurrent transfer characteristics (nd2406) v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (ma) i d drain current (ma) i d drain current (ma) i d on-resistance ( r ds(on) ) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) output characteristics (nd2406) transfer characteristics (nd2410) drain current (ma) i d v gs(off) gate-source cutoff voltage (v) on-resistance ( r ds(on) 200 160 120 0 0 0.4 2 80 40 0.8 1.2 1.6 0.8 v 1 v 1.2 v 1.4 v 1.6 v 1.8 v 2 v 200 0 0.4 0.8 1.2 1.6 2.0 160 120 80 40 0 0.2 v 0 v 0.2 v 0.4 v 0.6 v 0.8 v 1 v 500 400 300 0 4.5 3.5 0.5 200 100 2.5 1.5 0.5 25 c 125 c t c = 55 c 10 8 6 0 1 2 6 4 2 3 4 5 1000 800 600 0 400 200 500 4.5 3.5 2.5 1.5 0.5 0.5 400 300 200 100 0 55 c t c = 125 c i d drain current (ma) 10 100 1 k 25 20 0 15 10 5 nd2410 nd2406 v gs = 0 v r ds @ i d = 30 ma, v gs = 0 v i dss @ v ds = 7.5 v, v gs = 0 v r ds(on) i dss drain current (ma) i dss 25 c 0.6 v 0.4 v v ds = 10 v v ds = 10 v v gs = 2 v v gs = 2 v ) 0.4 v
nd2406l/2410l, BSS129 4 siliconix s-52426erev. c, 14-apr-97 typical characteristics (25 c unless otherwise noted) (cont'd) 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k forward transconductance vs. drain current normalized effective transient thermal impedance, junction-to-ambient (to-226aa) capacitance load condition effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) i d drain current (ma) v ds drain-to-source voltage (v) c capacitance (pf) t switching time (ns) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 i d drain current (ma) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) normalized on-resistance vs. junction temperature g fs forward transconductance (ms) 240 200 160 0 010 50 120 80 20 30 40 40 c iss c rss c oss 1 100 300 100 3 10 10 t f t d(off) t r t d(on) v dd = 25 v v gs = 0 to 5 v r g = 25 350 150 50 1 10 100 1 k 250 200 100 300 0 55 c 150 c 25 c v ds = 10 v pulse test 80 s, 1% duty cycle 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 0 v i d = 30 ma v gs = 5 v f = 1 mhz
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